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세미나&콜로퀴움

[물리학과/IBS연구단][콜로퀴움][2024.3.20] Photoelectric behaviors of 2D layered materials

  • 작성일 : 2024-03-19
  • 조회수 : 80
  • 작성자 : 물리학과 관리자

Title: Photoelectric behaviors of 2D layered materials

Speaker: Professor Seongchu Lim (Department of Energy Science,Sungkyunkwan University)

Time and Location: March 20th (Wed), 5-6 PM. Science Building B101


Abstract

     We characterize the current generation of 2D layered materials under light illumination. In the case of MoS2, whose metallicity alters from semiconductor to metal depending on the gate bias, the photocurrent type accordingly changes from photovoltaic from semiconducting MoS2 to photothermal from metallic one. Using metallic MoS2, mid-IR in the wavelength of 4.5 mm is detected, whereas its band gap energy is larger than 1.2 eV. In the heterostructure of 2D Te-WSe2, the difference in Fermi level contributes to generating photovoltaic current due to the formation of built-in potential. In addition, we observe the photothermoelectric current from the gate modulation of the heterostructure. By applying the source-drain bias, we can selectively choose a specific type of photocurrent in the heterostructure. The modulation of the built-in potential and metallicity enables the adaptive operation of photodetectors, which can be harnessed to detect the visible and IR in a single device.

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물리학과 콜로퀴움은 물리학과와 IBS연구단의 공동 주관으로 진행합니다.


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